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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SK369-V |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Position: BOTTOM; No. of Elements: 1; |
| Datasheet | 2SK369-V Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | AMPLIFIER |
| JEDEC-95 Code: | TO-92 |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | .4 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Maximum Operating Temperature: | 125 Cel |
