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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SK4106 |
| Description | N-CHANNEL; Surface Mount: NO; Maximum Drain Current (ID): 12 A; Maximum Drain-Source On Resistance: .52 ohm; JESD-30 Code: R-PSFM-T; Package Style (Meter): FLANGE MOUNT; |
| Datasheet | 2SK4106 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 12 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum DS Breakdown Voltage: | 500 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .52 ohm |









