Toshiba - 2SK880-Y(TE85L,F)

  1. Home
  2. Toshiba - 2SK880-Y(TE85L,F)
2SK880-Y(TE85L,F) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SK880-Y(TE85L,F)
Description Small Signal Field-Effect Transistors;
Datasheet 2SK880-Y(TE85L,F) Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SBSS138LT1 by Onsemi

SBSS138LT1

Onsemi

SBSS138LT1 by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5Ω RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals.
2N7002BKMB,315 by Nexperia

2N7002BKMB,315

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Transistor Application: SWITCHING; JESD-609 Code: e3;
ZVN3320FTA by Zetex Plc

ZVN3320FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
2N7002,235 by Nexperia

2N7002,235

Nexperia

2N7002,235 by Nexperia is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A ID. It's used for switching applications in enhancement mode, featuring a built-in diode. With a max operating temp of 150°C, it's ideal for surface mount designs requiring small outline packages.
FDMQ8205A by Onsemi

FDMQ8205A

Onsemi

FDMQ8205A by Onsemi is a Small Signal FET with N/P-Channel, 1.7A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications in enhancement mode, it features a complex configuration in a small outline package with no lead terminals.
NTR4170NT1G by Onsemi

NTR4170NT1G

Onsemi

NTR4170NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A ID, and 0.055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. This small outline transistor has a max power dissipation of 1.25W and can withstand temperatures up to 150°C.
PMV250EPEAR by Nexperia

PMV250EPEAR

Nexperia

PMV250EPEAR by Nexperia is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.24 ohm Drain-Source On Resistance and 1.5A Drain Current, in a SMALL OUTLINE package with GULL WING terminals. AEC-Q101 and IEC-60134 compliant, it operates in ENHANCEMENT MODE for automotive and industrial electronics.
ZVP2106ASTZ by Zetex Plc

ZVP2106ASTZ

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
FDC6333C by Fairchild Semiconductor

FDC6333C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: .095 ohm; JESD-609 Code: e3;
LND150N3-GP005 by Microchip Technology

LND150N3-GP005

Microchip Technology

LND150N3-GP005 by Microchip is a N-CHANNEL FET with 0.03A ID and 1000Ω RDS(on). Ideal for switching applications, it operates in depletion mode with built-in diode. Featuring 3 terminals, cylindrical package style, and 1pF Crss, it is designed for efficient performance in various electronic circuits.
FDN352AP by Onsemi

FDN352AP

Onsemi

FDN352AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.3A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max Power Dissipation of 0.5W and can withstand temperatures up to 150°C.
2N7002P,235 by NXP Semiconductors

2N7002P,235

NXP Semiconductors

NXP Semiconductors' 2N7002P,235 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C. Its PLASTIC/EPOXY package features GULL WING terminals and AEC-Q101 compliance.
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
ZVN3310FTA by Zetex Plc

ZVN3310FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
BSS138K by Jiangsu Changjiang Electronics Technology

BSS138K

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Form: GULL WING; Terminal Position: DUAL;
2N7002DW by Fairchild Semiconductor

2N7002DW

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
NDS355AN by National Semiconductor

NDS355AN

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: .5 W; JESD-30 Code: R-PDSO-G3; Package Style (Meter): SMALL OUTLINE;
2N7002BKV,115 by Nexperia

2N7002BKV,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): .34 A; Package Shape: RECTANGULAR;
BSS123 by Nexperia

BSS123

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 10 pF; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
BSS84 by Continental Device India

BSS84

Continental Device India

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Terminal Finish: MATTE TIN;