3SK283 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	3SK283
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Qualification: Not Qualified; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Datasheet	3SK283 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Sub-Category:	FET RF Small Signal
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	.15 W
Minimum Power Gain (Gp):	15 dB
Maximum Feedback Capacitance (Crss):	.03 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified

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