3SK291 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	3SK291
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet	3SK291 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.03 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Case Connection:	SOURCE
Minimum Power Gain (Gp):	20 dB
Maximum Feedback Capacitance (Crss):	.04 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	12.5 V
Qualification:	Not Qualified
Additional Features:	LOW NOISE
Maximum Drain Current (Abs) (ID):	.03 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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