Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 3SK320 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Maximum Power Dissipation Ambient: .1 W; No. of Terminals: 4; |
| Datasheet | 3SK320 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | FET RF Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, DEPLETION MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Power Dissipation Ambient: | .1 W |
| Minimum Power Gain (Gp): | 12 dB |
| Maximum Feedback Capacitance (Crss): | .03 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Additional Features: | LOW NOISE |
