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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | GT10Q101 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 10 A; Maximum Fall Time (tf): 320 ns; |
| Datasheet | GT10Q101 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 10 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 500 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 140 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 300 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Fall Time (tf): | 320 ns |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Additional Features: | HIGH SPEED |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
