Toshiba - GT40RR21(STA1,E,S)

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GT40RR21(STA1,E,S) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT40RR21(STA1,E,S)
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 1350 V; Maximum Fall Time (tf): 400 ns;
Datasheet GT40RR21(STA1,E,S) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 40 A
Maximum Power Dissipation (Abs): 230 W
Maximum Collector-Emitter Voltage: 1350 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 400 ns
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