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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | GT60M302 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6 V; |
| Datasheet | GT60M302 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 60 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 600 ns |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| Nominal Turn Off Time (toff): | 500 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 200 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 350 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 200 W |
| Maximum Fall Time (tf): | 370 ns |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 900 V |
| Additional Features: | HIGH SPEED |
| Maximum Gate-Emitter Voltage: | 25 V |
| Maximum VCEsat: | 3.3 V |
