HN1B04F(TE85L,F) by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	HN1B04F(TE85L,F)
Description	NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 70;
Datasheet	HN1B04F(TE85L,F) Datasheet

NAME	DESCRIPTION
Other Names:	HN1B04F(TE85LF)TR HN1B04F(TE85LF)CT HN1B04F (TE85L,F) HN1B04F(TE85LF)DKR
Maximum Collector Current (IC):	.5 A
Maximum Power Dissipation (Abs):	.3 W
Maximum Operating Temperature:	150 Cel
Sub-Category:	BIP General Purpose Small Signals
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	70

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