HN2C10FU by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	HN2C10FU
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;
Datasheet	HN2C10FU Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	7000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.08 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	80
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOW NOISE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Maximum Collector-Base Capacitance:	1.05 pF

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