Toshiba - HN2C13FT

  1. Home
  2. Toshiba - HN2C13FT
HN2C13FT by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number HN2C13FT
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Collector Current (IC): .015 A; Qualification: Not Qualified;
Datasheet HN2C13FT Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 16000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .015 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 5 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .9 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

LM3046MX/NOPB by National Semiconductor

LM3046MX/NOPB

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
MSC80196 by STMicroelectronics

MSC80196

STMicroelectronics

STMicroelectronics' MSC80196 is an NPN BJT transistor with a min hFE of 15, ideal for amplifier applications in the L Band. With a max fT of 3200 MHz and IC of 0.5 A, it operates at temperatures up to 200 °C. This surface-mount transistor has a metal-sealed co-fired ceramic package body and flat terminals.
BFU550XRR by NXP Semiconductors

BFU550XRR

NXP Semiconductors

BFU550XRR by NXP Semiconductors is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 12V, and transition frequency of 11GHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-frequency performance.
MPS5179RLRM by Onsemi

MPS5179RLRM

Onsemi

MPS5179RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 900MHz. It is ideal for amplifier applications in the very high-frequency band, featuring a single configuration in a cylindrical package with through-hole terminals.
BFP640FH6327XTSA1 by Infineon Technologies

BFP640FH6327XTSA1

Infineon Technologies

BFP640FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for C Band applications. It has a max fT of 40 GHz, 0.05 A IC, and 4 V VCE. This transistor is designed for high-frequency amplifier circuits in automotive electronics.
MPSH81RLRE by Onsemi

MPSH81RLRE

Onsemi

MPSH81RLRE by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It operates at a max temp of 150 °C, has a max Vce of 20V, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
934056947115 by NXP Semiconductors

934056947115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSSO-F3;
NESG260234-T1-AZ by Nec Electronics

NESG260234-T1-AZ

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e6;
2N2369A by Swampscott Electronics

2N2369A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
2N3137 by STMicroelectronics

2N3137

STMicroelectronics

2N3137 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 2W, operates up to 175 °C, and has a nominal transition frequency of 750 MHz. Ideal for very high-frequency circuits, it ensures reliable performance.
BFP520H6327XTSA1 by Infineon Technologies

BFP520H6327XTSA1

Infineon Technologies

BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.
2N2222 by Swampscott Electronics

2N2222

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NSVF4017SG4T1G by Onsemi

NSVF4017SG4T1G

Onsemi

NSVF4017SG4T1G by Onsemi is a NPN BJT transistor with 4 terminals, operating in X Band frequency range up to 10GHz. It has a max power dissipation of 0.45W and can handle collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 compliance.
2SC5646A-TL-H by Onsemi

2SC5646A-TL-H

Onsemi

Onsemi's 2SC5646A-TL-H is an NPN RF BJT with max power dissipation of 0.1W, hFE of 100, and fT of 8000MHz. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
UMX5NTR by ROHM

UMX5NTR

ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.
KST10MTF by Onsemi

KST10MTF

Onsemi

KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
LM3046M by National Semiconductor

LM3046M

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 5;
NESG260234-T1 by Nec Compound Semiconductor Devices

NESG260234-T1

Nec Compound Semiconductor Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-F3;
BFP420H6327XTSA1 by Infineon Technologies

BFP420H6327XTSA1

Infineon Technologies

Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.
SS9018FBU by Fairchild Semiconductor

SS9018FBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;