Toshiba - HN2E01FB

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HN2E01FB by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN2E01FB
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 1200;
Datasheet HN2E01FB Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .15 A
Maximum Power Dissipation (Abs): .3 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 1200
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