Toshiba - HN4B102J(TE85L,F)

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HN4B102J(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN4B102J(TE85L,F)
Description NPN AND PNP; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
Datasheet HN4B102J(TE85L,F) Datasheet
NAME DESCRIPTION
Other Names: 264-HN4B102J(TE85LF)TR
264-HN4B102J(TE85LF)TR-ND
264-HN4B102J(TE85L,F)DKR
264-HN4B102J(TE85L,F)TR-ND
264-HN4B102J(TE85L,F)TR
264-HN4B102J(TE85L,F)CT
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
No. of Terminals: 5
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .14 V
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