Toshiba - MG100G1JL1

  1. Home
  2. Toshiba - MG100G1JL1
MG100G1JL1 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MG100G1JL1
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 450 V; Qualification: Not Qualified; No. of Elements: 1;
Datasheet MG100G1JL1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 450 V
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
No. of Elements: 1
Polarity or Channel Type: NPN
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MJE350 by Continental Device India

MJE350

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
TIP29C by Power Innovations

TIP29C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;
TIP50 by STMicroelectronics

TIP50

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP41C by Texas Instruments

TIP41C

Texas Instruments

TIP41C by Texas Instruments is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. Its silicon material and 3MHz fT make it suitable for various electronic designs.
2N3055 by Swampscott Electronics

2N3055

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP120TU by Fairchild Semiconductor

TIP120TU

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: MATTE TIN;
MJD112T4G by Onsemi

MJD112T4G

Onsemi

MJD112T4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 2A, and min DC current gain of 200. With a package style of small outline and surface mount capability, it operates up to 150°C making it suitable for various power applications.
BD140 by Samsung

BD140

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP127 by Continental Device India

TIP127

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
NJVMJD122T4G by Onsemi

NJVMJD122T4G

Onsemi

NJVMJD122T4G by Onsemi is a NPN Darlington BJT with built-in diode and resistor, ideal for amplifier applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it operates b/w -65 to 150°C.
D44H8 by Motorola

D44H8

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;
TIP31C by Diotec Semiconductor Ag

TIP31C

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
MJD117T4G by Onsemi

MJD117T4G

Onsemi

MJD117T4G by Onsemi is a PNP power BJT with 100V VCEO, 2A IC, and 20W max power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a small outline package. With a transition frequency of 25MHz and operating temperature up to 150°C, it offers high performance in compact designs.
NJVMJD32CT4G-VF01 by Onsemi

NJVMJD32CT4G-VF01

Onsemi

NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.
TIP112 by Crimson Semiconductor

TIP112

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP112 by Diotec Semiconductor Ag

TIP112

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
BD679 by Baneasa S A

BD679

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
TIP147 by Texas Instruments

TIP147

Texas Instruments

TIP147 by Texas Instruments is a PNP BJT with 125W power dissipation, 10A collector current, and 100V collector-emitter voltage. Ideal for high-power applications like motor control due to its Darlington configuration and built-in resistor. Suitable for use in environments up to 150°C with a single terminal position.
TIP127 by Diotec Semiconductor Ag

TIP127

Diotec Semiconductor Ag

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
TIP50 by SPC TECHNOLOGY/ MULTICOMP

TIP50

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;