Toshiba - MG25Q6ES50

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MG25Q6ES50 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG25Q6ES50
Description Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 35 A; Maximum VCEsat: 3.2 V; Qualification: Not Qualified;
Datasheet MG25Q6ES50 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 35 A
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
No. of Terminals: 17
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XDFM-P17
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 3.2 V
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