Toshiba - MG30G1BL3

MG30G1BL3 by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	MG30G1BL3
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Datasheet	MG30G1BL3 Datasheet

MG30G1BL3 Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	30 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	100
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	450 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Case Connection:	ISOLATED

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