Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG50J1ZS40 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 700 ns; |
| Datasheet | MG50J1ZS40 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 50 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 600 ns |
| Transistor Application: | MOTOR CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 780 ns |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 250 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 700 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 250 W |
| Maximum Fall Time (tf): | 350 ns |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 600 V |
| Additional Features: | HIGH SPEED |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 3.5 V |
