Toshiba - MIG30J906EA

  1. Home
  2. Toshiba - MIG30J906EA
MIG30J906EA by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MIG30J906EA
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 35 A; Maximum VCEsat: 2.8 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
Datasheet MIG30J906EA Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 35 A
Maximum Power Dissipation (Abs): 125 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 3
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRG4BC30FD-SPBF by International Rectifier

IRG4BC30FD-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
FF900R12IE4VBOSA1 by Infineon Technologies

FF900R12IE4VBOSA1

Infineon Technologies

FF900R12IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 940ns and a nominal turn-on time of 350ns. This IGBT is commonly used in applications that require high power switching, such as motor drives and power supplies.
FF450R12ME4BOSA1 by Infineon Technologies

FF450R12ME4BOSA1

Infineon Technologies

FF450R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 675A. This rectangular package IGBT is suitable for applications requiring high power switching capabilities at temperatures up to 150°C.
FF450R12KT4F by Infineon Technologies

FF450R12KT4F

Infineon Technologies

Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
FP10R12W1T4BOMA1 by Infineon Technologies

FP10R12W1T4BOMA1

Infineon Technologies

Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
IXGH10N170 by IXYS Corporation

IXGH10N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;
IRG4RC10UDTRLP by Infineon Technologies

IRG4RC10UDTRLP

Infineon Technologies

Infineon's IRG4RC10UDTRLP is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 8.5A max collector current. It has a built-in diode, 345ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount configurations.
STGW60V60DF by STMicroelectronics

STGW60V60DF

STMicroelectronics

STGW60V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 375W Pd. It operates up to 175°C making it ideal for high-power applications in industries like automotive and renewable energy.
FF400R06KE3HOSA1 by Infineon Technologies

FF400R06KE3HOSA1

Infineon Technologies

FF400R06KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 500A. It is designed for power control applications, offering a nominal turn-off time of 600ns and a nominal turn-on time of 190ns.
FP100R06KE3BOSA1 by Infineon Technologies

FP100R06KE3BOSA1

Infineon Technologies

FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
APT100GN60B2G by Microchip Technology

APT100GN60B2G

Microchip Technology

Microchip Technology's APT100GN60B2G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it has a built-in diode, 435ns turn-off time, and 96ns turn-on time. Package style: IN-LINE, package shape: RECTANGULAR, terminal form: THROUGH-HOLE.
FF1000R17IE4BOSA1 by Infineon Technologies

FF1000R17IE4BOSA1

Infineon Technologies

FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.
IKY75N120CH3XKSA1 by Infineon Technologies

IKY75N120CH3XKSA1

Infineon Technologies

IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
APT60GA60JD60 by Microsemi

APT60GA60JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 112 A; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 82 ns;
FP25R12W2T4BOMA1 by Infineon Technologies

FP25R12W2T4BOMA1

Infineon Technologies

FP25R12W2T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 39A. Ideal for power control applications, it has a turn off time of 685ns and turn on time of 133ns. The package style is flange mount with a rectangular shape and isolated case connection.
IRGP50B60PD1PBF by Infineon Technologies

IRGP50B60PD1PBF

Infineon Technologies

IRGP50B60PD1PBF by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and current of 75A. It has a power dissipation of 390W, rise time of 20ns, and fall time of 20ns. Ideal for power control applications due to its fast switching speed and high collector-emitter voltage capability.
IXA17IF1200HJ by IXYS Corporation

IXA17IF1200HJ

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Terminal Finish: TIN SILVER COPPER;
FF600R12ME4B72BOSA1 by Infineon Technologies

FF600R12ME4B72BOSA1

Infineon Technologies

FF600R12ME4B72BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, making it ideal for POWER CONTROL applications. With a turn off time of 770ns and turn on time of 310ns, this rectangular package transistor operates at temperatures up to 175°C.
FGD5T120SH by Onsemi

FGD5T120SH

Onsemi

FGD5T120SH by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 3.6V and a collector-emitter voltage of 1200V. Ideal for general purpose switching applications, it has a turn-off time of 159.6ns and can handle a max collector current of 10A.
APT35GT120JU2 by Microchip Technology

APT35GT120JU2

Microchip Technology

Microchip Technology's APT35GT120JU2 is an N-CHANNEL IGBT with 1200V VCEsat, 55A IC, and 260W power dissipation. Ideal for power control applications due to its fast turn-off time of 610ns and built-in diode configuration. Operates at up to 150°C temperature, making it suitable for high-power systems.