Toshiba - MP4014

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 3 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500; Maximum Collector-Emitter Voltage: 60 V;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Position: SINGLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 3; Transistor Element Material: SILICON;

PNP; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V; JESD-30 Code: R-PSFM-T2;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 18 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 120 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

BCX5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 100, and max IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;

NPN; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;

TIP47 by Samsung is a NPN power bipolar junction transistor with a maximum power dissipation of 40W and a maximum operating temperature of 150 °C. It has a maximum collector-emitter voltage of 250V and a maximum collector current of 1A. This transistor is designed for switching applications and has a minimum DC current gain of 10. Its package style is TO-220AB with a rectangular shape and through-hole terminal form.

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;