Toshiba - MP4512

  1. Home
  2. Toshiba - MP4512
MP4512 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MP4512
Description NPN AND PNP; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 80 V; No. of Elements: 4;
Datasheet MP4512 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Transistor Element Material: SILICON
Polarity or Channel Type: NPN AND PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 2000
No. of Terminals: 12
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T12
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NJVMJD122T4G-VF01 by Onsemi

NJVMJD122T4G-VF01

Onsemi

NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.
TIP115 by Onsemi

TIP115

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: TIN;
TIP50 by Bourns

TIP50

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 10;
MJE15035G by Onsemi

MJE15035G

Onsemi

MJE15035G by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150°C with a min DC current gain of 10 (hFE).
TIP125 by New Jersey Semiconductor Products

TIP125

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP41C by General Transistor

TIP41C

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJE3055T by Inchange Semiconductor

MJE3055T

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP47 by SPC TECHNOLOGY/ MULTICOMP

TIP47

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP122 by Samsung

TIP122

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
TIP111 by Power Innovations

TIP111

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Qualification: Not Qualified;
TIP115 by Texas Instruments

TIP115

Texas Instruments

TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.
BUX87 by Baneasa S A

BUX87

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
TIP147 by Samsung

TIP147

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY;
TIP29C by Nte Electronics

TIP29C

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP31C by Semiconductors

TIP31C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2SC5200 by STMicroelectronics

2SC5200

STMicroelectronics

2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.
TIP42C by Baneasa S A

TIP42C

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Qualification: Not Qualified;
TIP3055G by Onsemi

TIP3055G

Onsemi

TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.
JANTX2N3055 by Cobham Plc

JANTX2N3055

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Body Material: METAL; No. of Terminals: 2;
TIP120 by Panasonic

TIP120

Panasonic

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;