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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MP4701 |
| Description | N-CHANNEL; Configuration: 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Minimum DS Breakdown Voltage: 120 V; |
| Datasheet | MP4701 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 12 |
| Minimum DS Breakdown Voltage: | 120 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T12 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 36 W |
| Maximum Drain-Source On Resistance: | .74 ohm |









