Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MP6301 |
| Description | NPN AND PNP; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A; |
| Datasheet | MP6301 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 100 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 3 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | BIP General Purpose Power |
| Polarity or Channel Type: | NPN AND PNP |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 1000 |
| No. of Terminals: | 12 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 2 W |
| Maximum Collector-Emitter Voltage: | 80 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T12 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 1.8 V |
