Toshiba - MT3S12T

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MT3S12T by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MT3S12T
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .04 A;
Datasheet MT3S12T Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .04 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 125 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 6 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .95 pF
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