Toshiba - MT3S19R

  1. Home
  2. Toshiba - MT3S19R
MT3S19R by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MT3S19R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13500 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 3;
Datasheet MT3S19R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 13500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .08 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 6 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 1 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CS9018 by Onsemi

CS9018

Onsemi

CS9018 by Onsemi is a N-CHANNEL BJT with VCEsat of 0.6V, hFE of 29, and fT of 600MHz. Ideal for high-frequency applications due to its low VCEsat and high transition frequency. Packaged in plastic/epoxy, it has 3 terminals and can handle up to 12V.
BFG35,115 by NXP Semiconductors

BFG35,115

NXP Semiconductors

NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.
MPSH11 by Onsemi

MPSH11

Onsemi

The Onsemi MPSH11 is an NPN RF BJT with a max fT of 650 MHz and hFE of 60. Ideal for UHF applications, it has a VCEO of 25V and Ptot of 1W. Its through-hole package makes it suitable for high-frequency circuit designs.
BFS483H6327XTSA1 by Infineon Technologies

BFS483H6327XTSA1

Infineon Technologies

Infineon's BFS483H6327XTSA1 is a NPN BJT transistor with 2 elements, ideal for amplifier applications in L Band frequencies. With a max fT of 8000 MHz and IC of 0.065 A, it features a collector-emitter voltage of 12 V. This small outline package has 6 terminals and matte tin finish.
BFU520VL by NXP Semiconductors

BFU520VL

NXP Semiconductors

NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.
BFS17 by Vishay Semiconductors

BFS17

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MPS3563G by Onsemi

MPS3563G

Onsemi

MPS3563G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max operating temp of 150 °C, fT of 1500 MHz, and IC of 0.05 A. The package is cylindrical with through-hole terminals made of silicon material.
934063122215 by NXP Semiconductors

934063122215

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
MPSH10RLRE by Onsemi

MPSH10RLRE

Onsemi

MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
BFP740ESDH6327XTSA1 by Infineon Technologies

BFP740ESDH6327XTSA1

Infineon Technologies

BFP740ESDH6327XTSA1 by Infineon is an NPN RF BJT with 14.5 dB power gain, ideal for amplifier applications in the C band. It features a max operating temperature of 150°C, fT of 45 GHz, and a collector-emitter voltage of 4.2V. This transistor has a small outline package with gull wing terminals and can handle up to 0.16W power dissipation.
2N3569 by General Diode

2N3569

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
NSVF4015SG4T1G by Onsemi

NSVF4015SG4T1G

Onsemi

NSVF4015SG4T1G by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.45W and a transition frequency of 10GHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package and operating temperature range from -55°C to 150°C.
2N5583 by New Jersey Semiconductor Products

2N5583

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): CYLINDRICAL;
2N4401 by Space Power Electronics

2N4401

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BLF871 by Ampleon Netherlands B V

BLF871

Ampleon Netherlands B V

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
BFR93AR,215 by NXP Semiconductors

BFR93AR,215

NXP Semiconductors

NXP Semiconductors' BFR93AR,215 is a NPN RF BJT transistor with 3 terminals. It operates in C band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle up to 12V collector-emitter voltage.
MMBTH81D87Z by Fairchild Semiconductor

MMBTH81D87Z

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
2N2907A by Space Power Electronics

2N2907A

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
MCH3007-TL-H by Onsemi

MCH3007-TL-H

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
CA3083M96 by Renesas Electronics

CA3083M96

Renesas Electronics

CA3083M96 by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450MHz, with a max collector-emitter voltage of 15V and current of 0.1A. This small outline package has 16 terminals, Gull Wing form, and is surface mountable.