Toshiba - MT6L57AE(TE85L)

  1. Home
  2. Toshiba - MT6L57AE(TE85L)
MT6L57AE(TE85L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MT6L57AE(TE85L)
Description NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .015 A; Minimum DC Current Gain (hFE): 70;
Datasheet MT6L57AE(TE85L) Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 2000 MHz
Maximum Collector Current (IC): .015 A
Maximum Power Dissipation (Abs): .1 W
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP29C by North American Philips Discrete Products Div

TIP29C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BC337-40 by Weitron Technology

BC337-40

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
2N3055 by Boca Semiconductor

2N3055

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N7002T by Diodes Incorporated

2N7002T

Diodes Incorporated

Other Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN LEAD; Peak Reflow Temperature (C): 240; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 60 V;
MMBT3904 by Unisonic Technologies

MMBT3904

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
TIP32C by Unisonic Technologies

TIP32C

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD139-16 by Weitron Technology

BD139-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BC546B by Texas Instruments

BC546B

Texas Instruments

BC546B by Texas Instruments is an NPN transistor with a max power dissipation of 0.625W and min DC current gain of 200. It operates at up to 150°C, handles a max collector current of 0.1A, and has a transition frequency of 150MHz. Ideal for low-power applications in electronics circuits.
2N2907A by Semiconductors

2N2907A

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
TIP111 by Philips Semiconductors

TIP111

Philips Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
MMBT4401 by Sinyork

MMBT4401

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N3019 by Boca Semiconductor

2N3019

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
2N7000-G by Weitron Technology

2N7000-G

Weitron Technology

Other Transistors;
TIP41C by Toshiba

TIP41C

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BF862 by Philips Semiconductors

BF862

Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: JUNCTION; Peak Reflow Temperature (C): 260;
2N4401 by Ksl Microdevices

2N4401

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N3055 by Artesyn Technologies

2N3055

Artesyn Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .01 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP110 by Boca Semiconductor

TIP110

Boca Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
TIP142T by Inchange Semiconductor

TIP142T

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);