Toshiba - RFM06U3X

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .03 pF; Additional Features: LOW NOISE;

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;

BF245BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.

BF966 by NXP Semiconductors is an N-channel RF FET designed for ultra-high frequency applications. It features a 20V min breakdown voltage, dual gate operation, and comes in a ceramic, metal-sealed package. Ideal for RF amplification in compact devices.

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors;

BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.

BF908WR-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in dual gate depletion mode, and supports ultra-high frequency bands. This surface-mount transistor ensures efficient performance with a compact design.

RF Small Signal Field-Effect Transistors;

3SK167 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high-frequency signal amplification in electronic devices operating up to 125 °C ambient temperature.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Case Connection: SOURCE; Operating Mode: DUAL GATE, DEPLETION MODE;

PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.

Toshiba's 2SK161 is an N-CHANNEL RF FET with a DEPLETION MODE. Operating in the VERY HIGH FREQUENCY BAND, it has a power dissipation of 0.2 W and max temperature of 125 °C. Ideal for AMPLIFIER applications due to its SILICON element material and low feedback capacitance of 0.15 pF.

Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.

BF513-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. Its compact SO package ensures efficient surface mounting.

The NXP Semiconductors BLF521 is an N-CHANNEL RF FET with 40V DS breakdown voltage and 10dB power gain. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a 1A max drain current and operates at up to 200°C.

TGF1350SPCX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; No. of Elements: 1;