Toshiba - RN2102FS

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RN2102FS by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN2102FS
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .05 W; Maximum Collector Current (IC): .05 A; Transistor Application: SWITCHING;
Datasheet RN2102FS Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .05 W
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature: 150 Cel
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