Toshiba - S-AU83AH

  1. Home
  2. Toshiba - S-AU83AH
S-AU83AH by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AU83AH
Description NARROW BAND HIGH POWER; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 450 MHz; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 3; Minimum Operating Temperature: -30 Cel;
Datasheet S-AU83AH Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: MODULE
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 450 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 520 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 28 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC963LC4TR by Hittite Microwave

HMC963LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;
XP1035-QH-0G00 by M/a-com Technology Solutions

XP1035-QH-0G00

M/a-com Technology Solutions

XP1035-QH-0G00 by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wideband medium-power applications, it features surface mounting and can withstand temperatures from -55°C to 85°C.
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
MAX2659ELT/V+T by Maxim Integrated

MAX2659ELT/V+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
MAX2630EUS-T by Maxim Integrated

MAX2630EUS-T

Maxim Integrated

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.
HMC634LC4 by Hittite Microwave

HMC634LC4

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;
ADL8106ACEZ-R7 by Analog Devices

ADL8106ACEZ-R7

Analog Devices

WIDE BAND LOW POWER;
LMV221SD/NOPB by National Semiconductor

LMV221SD/NOPB

National Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Package Equivalence Code: SOLCC6,.1,25;
HMC499 by Analog Devices

HMC499

Analog Devices

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
MAX2659ELT+T by Maxim Integrated

MAX2659ELT+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Temperature: -40 Cel;
SGA-3463Z by Sirenza Microdevices

SGA-3463Z

Sirenza Microdevices

SGA-3463Z by Sirenza Microdevices is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
HMC752LC4 by Analog Devices

HMC752LC4

Analog Devices

HMC752LC4 by Analog Devices is a wide band low power RF amplifier with 23 dB gain. It operates b/w 24-28 GHz, handles -5 dBm input power, and has a characteristic impedance of 50 ohms. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
RDA1005LTR7 by Qorvo

RDA1005LTR7

Qorvo

Qorvo's RDA1005LTR7 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount components in RF & microwave systems.
HMC952ALP5GETR by Analog Devices

HMC952ALP5GETR

Analog Devices

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
HMC636ST89E by Hittite Microwave

HMC636ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
MW7IC2040NR1 by Freescale Semiconductor

MW7IC2040NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);
PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.
HELA-10 by Mini-circuits

HELA-10

Mini-circuits

HELA-10 by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface-mount package.