Toshiba - S-AV16H

  1. Home
  2. Toshiba - S-AV16H
S-AV16H by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AV16H
Description NARROW BAND HIGH POWER; Maximum Operating Frequency: 160 MHz; Minimum Operating Temperature: -30 Cel; JESD-609 Code: e0; Maximum Input Power (CW): 24 dBm; Characteristic Impedance: 50 ohm;
Datasheet S-AV16H Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.5
Maximum Input Power (CW): 24 dBm
Minimum Operating Frequency: 150 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 160 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -30 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
MAAM-011109-TR1000 by M/a-com Technology Solutions

MAAM-011109-TR1000

M/a-com Technology Solutions

MAAM-011109-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 8 dB gain, operating from 10 MHz to 40 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -40°C to +85°C. Ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC451LP3E by Hittite Microwave

HMC451LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 5000 MHz;
LEE-29+ by Mini-circuits

LEE-29+

Mini-circuits

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.
BGA824N6E6327XTSA1 by Infineon Technologies

BGA824N6E6327XTSA1

Infineon Technologies

BGA824N6E6327XTSA1 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 17 dB. It operates in the frequency range of 1550 MHz to 1615 MHz and can handle a max input power of 0 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.
HMC565LC5 by Hittite Microwave

HMC565LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;
MAX2640AUT+T by Analog Devices

MAX2640AUT+T

Analog Devices

MAX2640AUT+T by Analog Devices is a wide band low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm, operates on 3/5 V supplies, and draws a max current of 7.8 mA. This component is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40°C to 125°C.
SGA-6489Z by Sirenza Microdevices

SGA-6489Z

Sirenza Microdevices

SGA-6489Z by Sirenza Microdevices is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and VSWR of 1.8, suitable for surface mount applications in RF & microwave systems.
ERA-3SM+ by Mini-circuits

ERA-3SM+

Mini-circuits

Mini-circuits ERA-3SM+ is a wideband low power RF amplifier with 15.4 dB gain and 50 ohm impedance. It operates from 0 to 3000 MHz, handling up to 13 dBm CW input power. Ideal for surface mount applications in RF and microwave systems, it has a compact plastic/epoxy package and requires only a 3V supply.
BGU8052X by NXP Semiconductors

BGU8052X

NXP Semiconductors

WIDE BAND LOW POWER;
HMC463LP5E by Hittite Microwave

HMC463LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
CMD291P4 by Qorvo

CMD291P4

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
HMC752LC4 by Hittite Microwave

HMC752LC4

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 28000 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e4; Maximum Input Power (CW): -5 dBm; Maximum Operating Temperature: 85 Cel;
HMC752LC4TR by Analog Devices

HMC752LC4TR

Analog Devices

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
MGA-85563-BLKG by Agilent Technologies

MGA-85563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;
SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
ERA-2SM by Mini-circuits

ERA-2SM

Mini-circuits

ERA-2SM by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, operating from 0 to 6000 MHz. It has a max input power of 15 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring surface mount construction in the temperature range of -45 to 85°C.