Toshiba - S3513

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S3513 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number S3513
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
Datasheet S3513 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 4 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3 A
Maximum Drain Current (Abs) (ID): 3 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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