Toshiba - S8851

S8851 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number S8851
Description RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 15 V; Case Connection: SOURCE;
Datasheet S8851 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .25 A
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Case Connection: SOURCE
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