Toshiba - SK2777(Q)

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SK2777(Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SK2777(Q)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Drain Current (Abs) (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SK2777(Q) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 65 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 6 A
Maximum Drain Current (Abs) (ID): 6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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