SSM3K105TU by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM3K105TU
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V;
Datasheet	SSM3K105TU Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.1 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	2.1 A
Maximum Drain-Source On Resistance:	.48 ohm

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