Toshiba - SSM3K123TU,LF

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SSM3K123TU,LF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM3K123TU,LF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
Datasheet SSM3K123TU,LF Datasheet
NAME DESCRIPTION
Other Names: SSM3K123TU(T5L,T)
SSM3K123TU(TE85L)CT
SSM3K123TULFTR
SSM3K123TU(T5LT)CT-ND
SSM3K123TU(T5LT)TR-ND
SSM3K123TULFDKR
SSM3K123TU,LF(T
SSM3K123TU(T5LT)DKR-ND
SSM3K123TU(TE85L)
SSM3K123TU(TE85L)CT-ND
SSM3K123TU(TE85L)DKR-ND
SSM3K123TU(T5LT)CT
SSM3K123TU(TE85L)TR-ND
SSM3K123TU(T5LT)DKR
SSM3K123TUT5LT
SSM3K123TU (T5L,T)
SSM3K123TU(TE85L)TR
SSM3K123TU(TE85L)DKR
SSM3K123TULFCT
SSM3K123TU,LF(B
SSM3K123TU(T5LT)TR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .032 ohm
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