
Image shown is a representation only.
Manufacturer | Toshiba |
---|---|
Manufacturer's Part Number | SSM3K7002KFU,LF(T |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Feedback Capacitance (Crss): 1.3 pF; Transistor Application: SWITCHING; |
Datasheet | SSM3K7002KFU,LF(T Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 1.3 pF |
Maximum Drain Current (ID): | .4 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | .7 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | 1.75 ohm |