SSM4K27CT by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM4K27CT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Datasheet	SSM4K27CT Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.5 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.5 A
Maximum Drain-Source On Resistance:	.26 ohm

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