Toshiba - SSM5H01TU(T5RSAN,F

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SSM5H01TU(T5RSAN,F by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM5H01TU(T5RSAN,F
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 5;
Datasheet SSM5H01TU(T5RSAN,F Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .45 ohm
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