Toshiba - SSM6K201FE

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SSM6K201FE by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6K201FE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 2.3 A; No. of Elements: 1;
Datasheet SSM6K201FE Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.3 A
Maximum Pulsed Drain Current (IDM): 4.6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 500 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 2.3 A
Maximum Drain-Source On Resistance: .186 ohm
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