Toshiba - SSM6K809R,LXGF

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SSM6K809R,LXGF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6K809R,LXGF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Form: FLAT; Maximum Operating Temperature: 175 Cel;
Datasheet SSM6K809R,LXGF Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 19.5 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 35 pF
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .036 ohm
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