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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | SSM6N37FE(TP3L,F) |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (Abs) (ID): .25 A; Maximum Drain Current (ID): .25 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | SSM6N37FE(TP3L,F) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .15 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .25 A |
| Maximum Drain Current (Abs) (ID): | .25 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









