SSM6N56FE by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM6N56FE
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
Datasheet	SSM6N56FE Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	6 pF
Maximum Drain Current (ID):	.8 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	20 V
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.235 ohm
Moisture Sensitivity Level (MSL):	1

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