ST1200FXF21 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	ST1200FXF21
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7100 W; Maximum Collector Current (IC): 1200 A; Maximum Collector-Emitter Voltage: 3300 V;
Datasheet	ST1200FXF21 Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	1200 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Nominal Turn Off Time (toff):	2500 ns
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	7100 W
Maximum Collector-Emitter Voltage:	3300 V
Terminal Position:	END
Nominal Turn On Time (ton):	5500 ns
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CEDB-X4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V

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