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Manufacturer | Toshiba |
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Manufacturer's Part Number | TA4006F-Y |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation Ambient: .25 W; No. of Elements: 1; No. of Terminals: 5; |
Datasheet | TA4006F-Y Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 19 dB |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 5 |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 85 Cel |
Maximum Power Dissipation Ambient: | .25 W |