Toshiba - TD62003APG(O,N)

  1. Home
  2. Toshiba - TD62003APG(O,N)
TD62003APG(O,N) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TD62003APG(O,N)
Description NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Style (Meter): IN-LINE; JESD-30 Code: R-PDIP-T16;
Datasheet TD62003APG(O,N) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 1000
No. of Terminals: 16
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T16
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: LOGIC LEVEL COMPATIBLE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MJD340T4 by Motorola

MJD340T4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
TIP112 by Jiangsu Changjiang Electronics Technology

TIP112

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
TIP120 by Weitron Technology

TIP120

Weitron Technology

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V; Package Style (Meter): FLANGE MOUNT;
BUV48A by STMicroelectronics

BUV48A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;
TIP35C by Power Innovations

TIP35C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Position: SINGLE; Qualification: Not Qualified;
TIP117 by Inchange Semiconductor

TIP117

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
BD14016STU by Onsemi

BD14016STU

Onsemi

BD14016STU by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and max power dissipation of 12.5W.
TIP42A by Bourns

TIP42A

Bourns

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15;
TIP120 by General Transistor

TIP120

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
D45VH10G by Onsemi

D45VH10G

Onsemi

D45VH10G by Onsemi is a PNP BJT transistor with 80V VCE, 15A IC, and 83W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TIP125 by New Jersey Semiconductor Products

TIP125

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
BD679 by New Jersey Semiconductor Products

BD679

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 80 V; Transistor Element Material: SILICON; No. of Elements: 1;
TIP3055 by SPC TECHNOLOGY/ MULTICOMP

TIP3055

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;
PZT2222A by Changzhou Galaxy Century Microelectronics

PZT2222A

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.15 W; Maximum Collector Current (IC): .6 A;
TIP120 by Micro Commercial Components

TIP120

Micro Commercial Components

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP47 by Motorola

TIP47

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;
TIP147 by Central Semiconductor

TIP147

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
TIP120G by Onsemi

TIP120G

Onsemi

TIP120G by Onsemi is a NPN power BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
TIP36C by Tt Electronics Plc

TIP36C

Tt Electronics Plc

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Terminal Finish: Tin/Lead (Sn/Pb); JEDEC-95 Code: TO-247;