TD62008AF by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62008AF
Description	NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .4 A; No. of Terminals: 16; Maximum VCEsat: 2.4 V;
Datasheet	TD62008AF Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.4 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1000
No. of Terminals:	16
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T16
No. of Elements:	7
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	85 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.4 V
Maximum Power Dissipation Ambient:	.625 W

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