TD62M4503AFN by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TD62M4503AFN
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .78 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	TD62M4503AFN Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.8 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	24
Maximum Power Dissipation (Abs):	.78 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G24
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.89 W
Maximum Drain-Source On Resistance:	1.1 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.8 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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