Toshiba - TD62M8600FG

TD62M8600FG by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TD62M8600FG
Description PNP; Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 2 A;
Datasheet TD62M8600FG Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 18
Maximum Power Dissipation (Abs): .9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G18
No. of Elements: 8
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: EMITTER
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 60
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 10 V
Additional Features: BUILT IN BIAS RESISTOR
Peak Reflow Temperature (C): NOT SPECIFIED
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