Toshiba - THM364020S-80

IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.

The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.

Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.

Samsung's M393A2G40EB2-CTD is a 288-terminal DDR DRAM module with 72-bit memory width and 2GX72 organization. Operating at 1.2V, it offers synchronous mode and self-refresh capability, making it ideal for high-performance computing applications requiring fast data access and reliable memory operations.

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.

SYNCHRONOUS DRAM; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

Micron Technology's MT47H64M16HR-3IT:E is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast access times.

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.

Micron Technology's MT46V16M16P-5BAIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

Alliance Memory's AS4C256M16D3C-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.

Micron Technology's MT47H64M16HR-3IT:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

Kingston's KVR16LS11/4 DDR DRAM MODULE features 512MX64 organization, 1.35V supply voltage, and 64-bit memory width. Ideal for applications requiring synchronous operation in microelectronic assemblies with a max operating temperature of 85°C.

Micron Technology's MT48LC8M16A2P-6AIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh mode, common I/O type, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory access in compact form factors.

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

IS42S32800J-7TL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4ns and a memory density of 268MB.

Micron Technology's MT46H32M16LFBF-6AT:C is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. Operating at 105 °C max temp, it suits industrial applications requiring fast access times of 5 ns. With synchronous operation and self-refresh capability, this DRAM offers reliable performance in various electronic systems.

Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.

Micron Technology's MT48LC4M32B2P-7:G is a 3.3V Synchronous DRAM with 4MX32 organization, suitable for commercial applications. It features a max clock frequency of 143 MHz, operates at temperatures b/w 0 to 70 °C, and has a memory density of 134217728 bits.

Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.