Toshiba - TIM5964-16SL-031

  1. Home
  2. Toshiba - TIM5964-16SL-031
TIM5964-16SL-031 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TIM5964-16SL-031
Description N-CHANNEL; Highest Frequency Band: C BAND; Peak Reflow Temperature (C): 240; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified; Operating Mode: DEPLETION MODE;
Datasheet TIM5964-16SL-031 Datasheet
NAME DESCRIPTION
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Operating Mode: DEPLETION MODE
Highest Frequency Band: C BAND
Peak Reflow Temperature (C): 240
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

A3G26H350W17SR3 by NXP Semiconductors

A3G26H350W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;
CGH40025F by Wolfspeed

CGH40025F

Wolfspeed

CGH40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C Band applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode at up to 175°C. This single configuration transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
PD84008TR-E by STMicroelectronics

PD84008TR-E

STMicroelectronics

PD84008TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
PD55015S-E by STMicroelectronics

PD55015S-E

STMicroelectronics

STMicroelectronics' PD55015S-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 5A Drain Current. The transistor comes in a PLASTIC/EPOXY package, suitable for surface mount with 73W power dissipation capability.
PD20015S-E by STMicroelectronics

PD20015S-E

STMicroelectronics

PD20015S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
BLF647P,112 by Ampleon Netherlands B V

BLF647P,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4; Transistor Application: AMPLIFIER;
A2I25D025GNR1 by NXP Semiconductors

A2I25D025GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
DE275-501N16A by IXYS Corporation

DE275-501N16A

IXYS Corporation

DE275-501N16A by IXYS Corp is a N-channel RF Power FET with 500V DS breakdown voltage, 16A max drain current, and operates in the VHF band. It is used for switching applications in enhancement mode, featuring a plastic/epoxy package and isolated case connection.
STAC4932B by STMicroelectronics

STAC4932B

STMicroelectronics

STAC4932B by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min DS breakdown voltage, operates in the ultra-high frequency band, and supports surface mount with a max temp of 200 °C. Ideal for high-performance RF circuits.
CGHV59350F by Wolfspeed

CGHV59350F

Wolfspeed

CGHV59350F by Wolfspeed is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Power Gain of 11.5 dB, ideal for amplifier applications in the C BAND frequency range. This HIGH ELECTRON MOBILITY transistor operates in DEPLETION MODE, with a max Drain Current of 24A and can withstand temperatures from -40 to 125 °C.
PTVA101K02EV-V1-R0 by Wolfspeed

PTVA101K02EV-V1-R0

Wolfspeed

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.
ARF463AP1G by Microchip Technology

ARF463AP1G

Microchip Technology

Microchip Technology's ARF463AP1G is a N-CHANNEL RF Power FET with 500V DS Breakdown Voltage. Ideal for amplifier applications in the VHF band, it offers 9A Drain Current and 180W Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150°C, featuring a SOURCE case connection.
LET9120M by STMicroelectronics

LET9120M

STMicroelectronics

LET9120M by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 18 A, breakdown voltage of 80 V, and operates at up to 200 °C. Its compact flange mount design ensures efficient performance in demanding environments.
BLF3G21-30,112 by Ampleon Netherlands B V

BLF3G21-30,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Maximum Drain Current (ID): 4.5 A; Package Style (Meter): FLANGE MOUNT;
934061301112 by NXP Semiconductors

934061301112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
MW6S010GNR1 by NXP Semiconductors

MW6S010GNR1

NXP Semiconductors

NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
GS61008T-TR by Gan Systems

GS61008T-TR

Gan Systems

GS61008T-TR by Gan Systems is a N-channel RF FET with 100V DS breakdown voltage, ideal for switching applications. Operating in enhancement mode, it offers 90A ID and operates at -55°C. Utilizing GaN technology, it features a plastic/epoxy package and is surface mountable for very high frequency band applications.
PD84006-E by STMicroelectronics

PD84006-E

STMicroelectronics

PD84006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 165 °C.
934061039112 by NXP Semiconductors

934061039112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
PD60004 by STMicroelectronics

PD60004

STMicroelectronics

PD60004 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in the L band, and supports surface mount with a compact SO package. This transistor excels in high-frequency performance up to 165 °C.